Record Details     « New Search       Brief Record Full Record MARC Record     Bibliographic Data Control Number 77206 Date and Time of Latest Transaction 20110811104518.AM General Information 110811s |||||||||b ||00||| Cataloging Source PCASTRD-DOST Language Code eng Main Entry - Personal Name Branz, Howard M.   Crandall, Richard S. Title Statement Defect equilibrium thermodynamics in hydrogenated amorphous silicon: consequences for solar cells Physical Description 159-168 Summary, Etc. It examine the effect of defect equilibrium thermodynamics in hydrogenated amorphous silicon (a-Si:H) p-i- solar cells. Piosson's equition is solved for the band bending, electric field and position-dependence of the dangling bond density in the i layer using the Fermi-energy dependence of charged dangling bond density predicted by thermodynamic theory. Within about 100 A of the n-i interface, where the Fermi energy approaches the conduction band edge, more than 10 18 cm-3 negatively charged dangling bonds can be formed. More than 10 16 cm-3 charged dangling bonds are found 200 A from the interface. This space charge increases the electric field near the n-i interface, thereby improving cell performance. Hole trapping and stabilization in these dangling bonds may account for the reduction in cell efficiency after light soaking. The large density of valence bandtail states means that the field near the p-i interface is not greatly affected by the more than 10 17 cm-3 positively charged dangling bonds that form there Subject Added Entry - Topical Term Amorphouse silicon -- solar cells   Solar cells           Physical Location           Digital Copy Not Available          Add to Book Cart  |   Download MARC