Record Details     « New Search       Brief Record Full Record MARC Record     Bibliographic Data Control Number 410104 Date and Time of Latest Transaction 20201212061613.AM General Information 201212s |||||||||b ||00||| Cataloging Source DOST-PCHRD Main Entry - Personal Name Antarasena, Choompol Title Statement Development of optoelectronic devices in Thailand Physical Description 75-86 Summary, Etc. Thailand began her research activity on optoelectronic devices, such as photodiodes, photovoltaic cells more than ten years ago. These devices are based on silicon material. In 1984, GaAs technology was introduced to the Semiconductor device research laboratory (SDRL, (Faculty of engineering. Chulalongkorn University. Liquid phase epitary (LPE) furnaces were installed and operated. Heterjunctions of GaAIA-GaAs were mainly investigated. Infrared and visible light emitting diode (LED) were fabricated and tested. The emission wavelenght could be varied from 5400 a to 900 A by changing aluminum composition in the mixer crystals. The present research status is to master the know-how of compound semiconductor technology which is fundamewntal for laser diode fabrication and optoelectronic applications Subject Added Entry - Topical Term GROWTH & DEVELOPMENT   OPTOELECTRONIC DEVICES   THAILAND   GROWTH & DEVELOPMENT           Physical Location           Digital Copy Not Available          Add to Book Cart  |   Download MARC