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MARC Record
Bibliographic Data
001
312451
005
20150706094959.AM
008
150706s |||||||||b ||00|||
040
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$aSTII-DOST
090
##
$aScienceDirect
100
1#
$aWei Cai
100
1#
$aKeonewook Kang
245
00
$aSize and temperature effects on the fracture mechanisms of silicon nanowires$bMolecular dynamics simulations$cby Keonewook Kang and Wei Cai
260
##
$aAmsterdam$bElsevier Ltd.$c2010
300
##
$apages 1387-1401$bcomputer file; text; 1,948kb
504
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$aIncludes bibliographical references and appendices
520
3#
$aWe present molecular dynamics simulations of [1 1 0]-oriented Si nanowires (NWs) under a constant strain rate in tension until failure, using the modified embedded-atom-method (MEAM) potential. The fracture behavior of the NWs depends on both temperature and NW diameter. For NWs of diameter larger than 4 nm, cleavage fracture on the transverse (1 1 0) plane are predominantly observed at temperatures below 1000 K. At higher temperatures, the same NWs shear extensively on inclined {1 1 1} planes prior to fracture, analogous to the brittle-to-ductile transition (BDT) in bulk Si. Surprisingly, NWs with diameter less than 4 nm fail by shear regardless of temperature. Detailed analysis reveals that cleavage fracture is initiated by the nucleation of a crack, while shear failure is initiated by the nucleation of a dislocation, both from the surface. While dislocation mobility is believed to be the controlling factor of BDT in bulk Si, our analysis showed that the change of failure mechanism in Si NWs with decreasing diameters is nucleation controlled. Our results are compared with a recent in situ tensile experiment of Si NWs showing ductile failure at room temperature.
650
04
$aEngineering
650
04
$aSilicon$xAnalysis
650
04
$aFracture (Materials)$xAnalysis
650
04
$aFracture mechanisms
852
##
$aDOST$bSTII$hScienceDirect$jNONPRINTS$kNP$p14-15995$t1$x14-15995$yOnline/Download$12012-01-19
991
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$wNONPRINTS
Physical Location
Department of Science and Technology
Science and Technology Information Institute
ScienceDirect
Digital Copy
Not Available
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