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Bibliographic Data
Control Number16533
Date and Time of Latest Transaction20110428095116.AM
General Information110428s |||||||||b ||00|||
Cataloging SourceSTII-DOST
Language Codeeng
Local Call Number(T) QD181.S6 R147 1996
Main Entry - Personal NameRamos, Emmanuel S.
Title StatementLow pressure chemical vapor deposition of Sio2 on porous vycor tubes for gas separation. by Emmanuel S. Ramos
Physical Description219 l. illus., figs, graphs, tables
Summary, Etc.A study on low pressure chemical vapor deposition of Sio2 on porous vycor tubes for gas separation. The high flow rates of O2 and N2O oxidants resulted to homogenous gas phase reactions, such conditions actually favored the formation of membranes having good permeability and selectivity properties
Subject Added Entry - Topical TermChemistry
 Silicon dioxide (SiO2) films -- Chemical vapor deposition
 Gas separation -- Silicon dioxide on porous vycor tubes
 Chemical vapor deposition -- Silicon dioxide
LocationDOST STII QD181.S6 R147 1996 THESIS Fil(T) 8001468 0 0000-00-00
  
     
 
Physical Location
Department of Science and Technology
Science and Technology Information InstituteQD181.S6 R147 1996
  
     
 
Digital Copy
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