Record Details     « New Search       Brief Record Full Record MARC Record     Bibliographic Data 001    77274 005    20110811104449.AM 008    110811s |||||||||b ||00||| 040 ## $aPCASTRD-DOST 041 0# $aeng 100 1# $aRistein, J. 245 00 $aExcitation spectroscopy of photoluminescence in a-Si:H 300 ## $a403-409 520 3# $aThe photoluminescence (PL) excitation spectrum (intensity of PL as a function of the wavelength of the exciting light) has been measured over the excitation source. At all wavelengths, the PL intensity varies with incident laser power, I, as I0.9 independent of wavelength. The resulting PL excitation spectrum has two distinguishing features, an exponential rise at lower energies followed by a leveling-off above about 1.15eV. Although the precise functional form of the data at low energies is not uniquely determined, the data are consistent with an exponential rise whose slope is the same as that measured in optical absorption at higher energies. 650 04 $aAmorphous silicon -- Materials science 650 04 $aPhotoluminescence 650 04 $aSpectroscopy -- Materials science 991 ## $wANALYTICS           Physical Location           Digital Copy Not Available          Add to Book Cart  |   Download MARC