Record Details     « New Search       Brief Record Full Record MARC Record     Bibliographic Data Control Number 77559 Date and Time of Latest Transaction 20110811103913.AM General Information 110811s |||||||||b ||00||| Cataloging Source PCASTRD-DOST Language Code eng Main Entry - Personal Name Nakamichi, Ichiro   Ishikawa, Yutaka   Yazaki, Kazuyuki Title Statement diffusion of Bismuth in silicon Physical Description 1272-1273 Summary, Etc. The diffusion of bismuth into silicon from a spin-on source has been investigated at a temperature range of 1050-1200 C. The concentration profile of bismuth agrees with the complementary error function, and its diffusion coefficient shows a value similar to the values of phosphorus and boron. Its activation energy is estimated to be 2.50 eV. That is much smaller than the values of phosphorus, boron and arsenic Subject Added Entry - Topical Term Bismuth   Diffusion   Silicon   concentration profile   Diffusion coefficient   Spin-on           Physical Location           Digital Copy Not Available          Add to Book Cart  |   Download MARC