Record Details     « New Search       Brief Record Full Record MARC Record     Bibliographic Data Control Number 77270 Date and Time of Latest Transaction 20110811104454.AM General Information 110811s |||||||||b ||00||| Cataloging Source PCASTRD-DOST Language Code eng Main Entry - Personal Name Schiff, E.A.   Antoniadis, Hmer   Hotaling, S.P., Title Statement Electron trapping and paramagnetic defect density measurements in hydrogenated amorphous silicon Physical Description 357-362 Summary, Etc. Electron deep-trapping mobility--lifetime (ur) products were measured in a series of hydrogenated amorphous silicon (a-Si:H) specimens using the transient photocurrent charge-collection technique. A logarithmic dependence of the resulting ur estimate upon the collection time was observed. The correlation of ur with independent electron spin resonance spectroscopy determinations of the D defect density Ns was studied. The data are roughly distributed as ur a Ns-1 for specimens prepared from pure silane at varying deposition temperatures. The correlation suppors the proposal of Street that the predominant deep trap for electrons is the D defect Subject Added Entry - Topical Term Amorphous silicon -- Materials science           Physical Location           Digital Copy Not Available          Add to Book Cart  |   Download MARC