Record Details     « New Search       Brief Record Full Record MARC Record     Bibliographic Data Control Number 77269 Date and Time of Latest Transaction 20110811104455.AM General Information 110811s |||||||||b ||00||| Cataloging Source PCASTRD-DOST Language Code eng Main Entry - Personal Name Lush, G.B.,et.al. Title Statement Correlation of material properties and recombination losses in A10.2Ga0.8As solar cells Physical Description 363-372 Summary, Etc. To optimize the efficiency of A1GaAs solar cells intended for tandem cell applications, a detailed understanding of recombination losses and their relation to material quality and device design is essential. In this paper, recombination losses in A10.2Ga0.8As are characterized and the implications for high-efficiency cells are examined. Bulk and perimeter recombination in space-charge regions is characterized by dark I-V analysis, and recombination losses in quasi-neutral regions are studied by internal quantum efficiency measurements. Deep-level transient spectroscopy studies are then used to correlate the measured recombination losses to material quality. Finally, the estimated material parameters are used to assess the efficiency-limiting factors in present-day A10.2Ga0.8As solar cells Subject Added Entry - Topical Term Film -- Materials science   Materials science application           Physical Location           Digital Copy Not Available          Add to Book Cart  |   Download MARC