Record Details     « New Search       Brief Record Full Record MARC Record     Bibliographic Data Control Number 76800 Date and Time of Latest Transaction 20110811105540.AM General Information 110811s |||||||||b ||00||| Cataloging Source PCASTRD-DOST Language Code eng Main Entry - Personal Name Liu, W.C., et al. Title Statement MBE grown undoped superlattice gate and modulation-doped buffer structure for power FET applications Physical Description 904-906 Summary, Etc. A new power FET with a hybrid (MESFET and MD) operation mechanism has been fabricated successfully. The insertion of a modulation-doped (MD) structure between the AlGaAs buffer and GaAs active layer gives high output current and high transconductance. By reducing the gate length to 1um, transconductance of up to 340mS/mm can be expected. Furthermore, the use of an undoped AlGaAs/GaAs superlattice "gate insulator" provides low leakage current and much higher gate breakdown voltage (>30V). From the experimental results, it is obvious that the proposed structure is suitable for high power applications. Subject Added Entry - Topical Term Superlattice   Modulation-doped (MD)   Gate insulator   Hybrid mechanism   MISFET   HEMT           Physical Location           Digital Copy Not Available          Add to Book Cart  |   Download MARC