Record Details     « New Search       Brief Record Full Record MARC Record     Bibliographic Data Control Number 77504 Date and Time of Latest Transaction 20110811104003.AM General Information 110811s |||||||||b ||00||| Cataloging Source PCASTRD-DOST Language Code eng Main Entry - Personal Name Horikoshi, Yoshiji   Yamaguchi, Hiroshi Title Statement Step-flow-growth on vicinal GaAs surfaces by migration-enhanced epitaxy Physical Description L1456-l1459 Summary, Etc. The mechanism of step-flow growth on vicinal GaAs substrates during migration-enhanced epitaxy are studied using the reflection high-energy electron diffraction technique. Results show that the low As pressure during migration-enhanced epitaxy growth accelerates step-flow growth. In addition, it is also shown that monolayer terraces composed of surface Ga atoms are formed from step edges during the Ga deposition process. A GaAs/AlAs tilted superlattice is established using this growth technique. X-ray diffraction measurement and transmission electron microscopy observations show that the fabricated structure has periodic composition modulation along the axis tilted from the substrate aximuth Subject Added Entry - Topical Term Migration-enhanced epitaxy   Surface migration   Vicinal surface   Tilted superlattice           Physical Location           Digital Copy Not Available          Add to Book Cart  |   Download MARC