Record Details     « New Search       Brief Record Full Record MARC Record     Bibliographic Data Control Number 77165 Date and Time of Latest Transaction 20110811104603.AM General Information 110811s |||||||||b ||00||| Cataloging Source PCASTRD-DOST Language Code eng Main Entry - Personal Name Dai, Guo-Cai, et.al. Title Statement new mechanism of light-induced reversible changes in a-Si:H p-i-n solar cells Physical Description 159-164 Summary, Etc. Based on analysis of the experimental results of photoinduced changes and of transient photoresponse, a new mechaism for light-induced changes in a-Si:H p-i-n solar cells is suggested. This mechanism takes into account both the reversible changes of dangling bond density and the activation energy of annealing, commonly ranging from 1 eV to 1.5 eV. It is suggested that there is a stable density of T3+ and of T2- in the annealed state, and that the transition T3+ = T3- --> 2T30 is induced by light and the reversal 2T30-->T3+ + T3- by annealing Subject Added Entry - Topical Term Solar cells   Amorphous silicon -- Materials science           Physical Location           Digital Copy Not Available          Add to Book Cart  |   Download MARC