Record Details     « Return to search results       Brief Record Full Record MARC Record     Bibliographic Data 001    77165 005    20110811104603.AM 008    110811s |||||||||b ||00||| 040 ## $aPCASTRD-DOST 041 0# $aeng 100 1# $aDai, Guo-Cai, et.al. 245 00 $a new mechanism of light-induced reversible changes in a-Si:H p-i-n solar cells 300 ## $a159-164 520 3# $aBased on analysis of the experimental results of photoinduced changes and of transient photoresponse, a new mechaism for light-induced changes in a-Si:H p-i-n solar cells is suggested. This mechanism takes into account both the reversible changes of dangling bond density and the activation energy of annealing, commonly ranging from 1 eV to 1.5 eV. It is suggested that there is a stable density of T3+ and of T2- in the annealed state, and that the transition T3+ = T3- --> 2T30 is induced by light and the reversal 2T30-->T3+ + T3- by annealing. 650 04 $aSolar cells 650 04 $aAmorphous silicon -- Materials science 991 ## $wANALYTICS           Physical Location           Digital Copy Not Available          Add to Book Cart  |   Download MARC