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Control Number77266
Date and Time of Latest Transaction20110811104459.AM
General Information110811s |||||||||b ||00|||
Cataloging SourcePCASTRD-DOST
Language Codeeng
Main Entry - Personal NameShing, Y.H.
Title StatementElectron cyclotron resonance deposition and plasma diagnostics of a-Si:H and a-C:H films
Physical Description331-340
Summary, Etc.Electron cyclotron resonance (ECR) microwave plasma enhanced deposition processes have been developed for depositing amorphous silicon (a-Si:H) and amorphous carbon (a-C:H) films. The ECR plasma is generated by a 2.45 GHz microwave power source and a resonant magnetic field in a cyclindrical plasma chamber; the film is then deposited remotely using the extracted ECR plasma through a divergent magnetic field with or without radio frequency power bias. A high deposition rate of about 25 A s-1 and a light-to-dark conductivity ration of 1 X 10 5 for a-Si:H films have been obtained by the ECr process using a pure silane plasma. The methane and silane ECR plasmas used for a-C:H and a-Si:H film depositions are analyzed by optical emission spectroscopy (OES) of SiH* and H* excited states. Steady-state OES studies have established a linear correlation between the SiH* emission intensity and the film deposition rate. This linear correlation suggests that SiH* species are related to the neutral radicals which are responsible for the a-Si:H film deposition. Hard and soft a-C:H films have been deposited by ECR with and without r.f. bias power, respectively. The ECR-deposited a-C:H films have been characterized by fluorescence, IR and Raman spectroscopy. The r.f. bias to the substrate is found to play a critical role in determining the film structure and the carbon bonding configuration of ECR-deposited a-C:H films
Subject Added Entry - Topical TermPlasma diagnostic -- Materials science
 Microwave plasma -- Material science
 Amorphous silicon -- Materials science
 Amorphous carbon -- Materials science
 
     
 
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