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Your search for [subject]DLTS returned 8 records. |
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Electron traps in GaAs grown by molecular beam epitaxy on On-axis(100) and off-axis substracts.
Subject: Gallium arsenide(GaAs); Deep level transient spectroscopy (DLTS).
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Correlation between fill factors of amorphous silicon solar cells, and their i layer densities of states as determined by DLTS.
by Kalina, J.;
Subject: Amorphous silicon -- Materials science; Deep-level transient spectroscopy (DLTS).
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Deep level transient spectroscopy of gallium arsenide grown by molecular beam epitaxy on on-axis (100) and off-axis substrates.
by Sarmiento, Raymund Lee Antonio C. Jr.; 2001.
Subject: Physics; Deep level transient spectroscopy (DLTS); Gallium arsenide; Molecular beam epitaxy (MBE).
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Lattice-mismatch-induced deep level in InxGa1-xAsyP1-y (O< y < 0.41) grown on (100) GaAs.
by Zhu, Qin-Sheng;
Subject: InGaAsP/GaAs; Liquid phase epitaxy (LEP); Lattice mismatch; DLTS; Electron trap level; Heterointerface.
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Diffusion coefficient of interstitial iron in silicon.
by Nakashima, Hiroshi;
Subject: Iron; Silicon; Interstitial iron; Diffusion coefficient; DLTS; In-depth profile.
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Study on deep levels in CuInSe2 by deep level transient spectroscopy measurements on CdS/CuInSe2 solar cells.
by Christoforou, N.;
Subject: Deep level transient spectroscopy (DLTS); Spectroscopy measurement -- Materials science; Solar cells.
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Current-voltage, capapcitance-voltage, and capacitance-temperature measurements on CdS/CuInSe2 solar cells.
by Christoforou, N.;
Subject: Current-volrage; Capacitance-voltage; Capacitance-temperature; Deep level transient spectroscopy (DLTS).
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Difference between the face up and face to face methods in AsH3 capless annealing of LEC-GaAs.
by Nishitsuji, Mitsuru;
Subject: GaAs; AsH3/H2; Capless annealing; Face up; Face to face; Carrier profile; DLTS; LPE-B level; H2 atmosphere.
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